Conference Proceedings

1999 | 2000 | 2001 | 2002 | 2003 | 2004 | 2005 | 200620082011 | 2016

2016

C23. W. C. Yap and W. J. Zhu, "Novel Two-dimensional GeSe-MoS2 PN Heterojunctions", 47th IEEE Semiconductor Interface Specialists Conference, 2016

C22. J. Liu, and W. J. Zhu, "Characterization of Interface States in Black Phosphorus Capacitors with Boron Nitride Gate Dielectrics", 47th IEEE Semiconductor Interface Specialists Conference, 2016

2011

C21. Y.Q. Wu, D. B. Farmer, W. J. Zhu, A. Valdes-Garcia, K.A. Jenkins, C. Dimitrakopoulos, Ph. Avouris and Y.-M. Lin, “Record High RF Performance for Epitaxial Graphene Transistors”, IEEE International Electron Device Meeting (IEDM), Technical Digest, pp. 23.8.1 - 23.8.3, (2011)

2008

C20. W.J. Zhu, J.Shepard, W. He, A. Ray, P. Ronsheim, D. Schepis, D. Mocuta, E. Leobandung, "High performance and highly stable ultra-thin oxynitride for CMOS applications",The 9th International Conference on Solid-State and Integrated-Circuit Technology, A6.5, (2008)

2006

C19. P. Jamison, M. Copel, M. Chudzik, M.M. Frank, B.P.Linder, R.Jammy, W.J. Zhu, “A comparison of electrical and physical properties of MOCVD hafnium silicate thin films deposited using various silicon precursors”, Materials Research Society Symposium Proceedings, v 917, Gate Stack Scaling: Materials Selection, Role of Interfaces, and Reliability Implications, p 95-99, (2006)

2005

C18. E. Leobandung, H. Nayakama, D.Mocuta, … W.J. Zhu, et. al, “High performance 65 nm SOI technology with dual stress liner and low capacitance SRAM cell”, Symposium on VLSI Technology, Symposium on VLSI Technology, Digest of Technical Papers, p 126-127, (2005)

2004

C17. D.-G. Park, Z.J. Luo, N. Edleman, W.J. Zhu, P. Nguyen, K. Wong, C. Cabral1, P. Jamison1, B.H. Lee, A. Chou, M. Chudzik, J. Bruley, O. Gluschenkov, P. Ronsheim, A. Chakravarti, R. Mitchell, V. Ku, H. Kim1, E. Duch1, P. Kozlowski1, C.D’Emic1, V. Narayanan1, A. Steegen, R. Wise, R. Jammy1, R. Rengarajan, H. Ng, A. Sekiguchi, and C.H. Wann, “Thermally robust dual-work function ALD-MNx MOSFETs using conventional CMOS process flow”, 2004 Symposium on VLSI Technology, Digest of Technical Papers, pp.186-187, (2004)

2003

C16. N. V. Nguyen, J.-P. Han, and J.Y. Kim, W.J. Zhu, Z. Luo, and T. P. Ma, "Optical properties of jet-vapor-deposited TiAlO and HfAlO determined by vacuum ultraviolet spectroscopic ellipsometry", Characterization and Metrology for ULSI Technology, 2003 International Conference, pp.181-185, (2003)

C15. S. Stemmer, Y. Yang, Y. Li, B Foran, P.S. Lysaght, J.A. Gisby, J.R. Taylor, S.K. Streiffer, P. Fuoss, S. Seifert, W.J. Zhu, and T.P. Ma, "Structure and stability of alternative gate dielectrics for Si CMOS”, 2003 International Semiconductor Device Research Symposium, pp.60- 61, (2003)

C14. C.M. Osburn, S.K. Han, I. Kim, S.A. Campbell, E. Garfunkel, T. Gustafson, J. Hauser, T.-J. King, Q. Liu, P. Ranade, A. Kingon, D.-L. Kwong, S.J. Lee, C.H. Lee, K. Onishi, C.S. Kang, R. Choi, H. Cho, R. Nich, G. Lucovsky, J.G. Hong, T.P. Ma, W.J. Zhu, Z. Luo, J.P. Maria, D. Wicaksana, V. Misra, J.J. Lee, Y.S. Suh, G. Parksons, D. Niu, and S. Stemmer, “Integration Issues with high-k Gate Stacks”, The Electrochemical Society PV 2003-06, ULSI Process Integration III, p.375, (2003)

2002

C13. W.J. Zhu, T. Tamagawa, W.Y. Wang, and T.P. Ma, “Mobility Extraction for MOSFETs Made with Ultra-thin High-k Dielectrics: Correct Accounting of Channel Carriers”, IEEE 33th Semiconductor Interface Specialists Conference (SISC), Sec. 7.2, (2002) (IEEE SISC Ed Nicollican Award for Best Student Paper)

C12. W.J. Zhu, T.P. Ma, T. Tamagawa, Y. Di, M. Gibson, J. Kim, R. Carruthers and T. Furukawa, “Thermal Stability of Hafnium Oxide and Hafnium Aluminum Oxide”, Connecticut Microelectronics and Optoelectronics Symposium (CMOC), Section 1, paper 02, (2002)

2001

C11. W.J. Zhu, T. P. Ma, T. Tamagawa, Y.Di, J. Kim, R. Carruthers, M.Gibson and T. Furukawa, “HfO2 and HfAlO for CMOS: Thermal Stability and Current Transport”, IEEE International Electron Device Meeting (IEDM), Technical Digest, Section 20-4, pp. 463-466, (2001)

C10. W.J. Zhu, M. Khare, J. Snare, P.R. Varekamp, S.H. Ku, P. Agnello, T.C. Chen and T.P. Ma, "Thickness Measurement of Ultra-thin Gate Dielectrics under Inversion Condition", International Symposium on VLSI Technologies, Systems and Applications, (2001)

C9. W.J. Zhu, T. Tamagawa, Y. Di and T.P. Ma, “Thermal Stability of Hafnium Oxide and Hafnium Aluminum Oxide”, IEEE 32th Semiconductor Interface Specialists Conference (SISC), Sec. 6.2, (2001)

C8. W.J. Zhu, T. Tamagawa, J. Kim, C. Broadbridge, T.P. Ma, “Characteristics of Ultra-thin Hafnium Oxide Gate Dielectrics”, Connecticut Microelectronics and Optoelectronics Symposium (CMOC), Section 3, paper 02, (2001)

C7. C. Caragianis-Broadbridge, J.-P. Han, T.P. Ma, A.H. Lehman, W.J. Zhu, Z. Luo, D.L. Pechkis, B.L. Laube; “Microstructure and Physical Characterization of Ferroelectric-gate Memory Capacitors with Various Buffer Layers”, Transport and Microstructural Phenomena in Oxide Electronics, Material Research Society, San Francisco, Vol. 666, (2001)

C6. C. Caragianis-Broadbridge, D.L. Pechkis and E. Anderson, J.-P. Han, W.J. Zhu, Z. Luo, T.P. Ma, A. Hein Lehman and K.L. Klein, and B.L. Laube, “Microstructural and Physical Properties of Thin Film Dielectrics on Silicon Substrates”, Connecticut Microelectronics and Optoelectronics Symposium (CMOC), Section, P4, (2001)

2000

C5. W.J. Zhu, T. Tamagawa, B. Halpern, X.W. Wang, and T.P. Ma, “Electrical Properties of Ultra-thin Hafnium Oxide Gate Dielectrics”, IEEE 31th Semiconductor Interface Specialists Conference (SISC), Sec. 1.2, (2000)

C4. C. Caragianis-Broadbridge, J. R. Miecznikowski, W.J. Zhu, Z. Luo, J. Han, and A. Hein Lehman, “Microstructure and Electronic Properties of Thin Film Nanoporus Silica as a Function of Processing and Annealing Methods”, Materials, Technology, and Reliability for Advanced Interconnects and Low-k Dielectrics, Material Research Society, San Francisco, Vol. 398, (2000)

C3. W.J. Zhu, X.W. Wang, and T.P. Ma, “Temperature Dependence of Channel Electron Mobility in 6H-SiC NMISFETs”, Connecticut Microelectronics and Optoelectronics Symposium (CMOC), (2000)

1999

C2. W.J. Zhu, X.W. Wang, and T.P. Ma, “Temperature dependence of channel Electron Mobility in 6H-SiC nMOSFETs”, IEEE 30th Semiconductor Interface Specialists Conference (SISC), Sec. 3.1, (1999)

C1. X.W. Wang, W.J. Zhu and T.P. Ma, “High Temperature Reliable nMOSFETs on p-type 6H-SiC”, IEEE International Electron Device Meeting (IEDM), Technical Digest, pp. 209-212, (1999)