Journals

1997 | 1999 | 2002 | 2003 | 2004 | 200920102011 | 2012 | 2013 | 20142016

2016

J32. Z. Yang, R. Grassi, M. Freitag, Y-H. Lee, T. Low, and W. Zhu, "Spatial/temporal photocurrent and electronic transport in monolayer molybdenum disulfide grown by chemical vapor deposition", Applied Physics Letters Vol. 108, Article number: 083104, (2016) [PDF]

J31. S-C. Lu, M. Mohamed, and W. Zhu, "Novel vertical hetero- and homo-junction tunnel field-effect transistors based on multi-layer 2D crystals", 2D Materials, Vol.3, Article number: 011010, (2016) [PDF]

J30. M. Mehboudi, A. M. Dorio, W. Zhu, A. van der Zande, H. O. Churchill, A. A. Pacheco-Sanjuan, E. O. Harriss, P. Kumar, and S. Barraza-Lopez, "Two-Dimensional Disorder in Black Phosphorus and Monochalcogenide Monolayers", Nano Letters, Vol. 16, pp 1704-1712, (2016) [PDF]

2014

J29. Wenjuan Zhu, Tony Low, Yi-Hsien Lee, Han Wang, Damon B. Farmer, Jing Kong, Fengnian Xia and Phaedon Avouris, "Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition", Nature Communications, Vol. 5, Article number: 3087, (2014) [PDF]

J28. Marcus Freitag, Tony Low, Luis Martin-Moreno, Wenjuan Zhu, Francisco Guinea and Phaedon Avouris, "Substrate-Sensitive Mid-infrared Photoresponse in Graphene", ACS Nano, Vol. 8, pp 8350-8356, (2014) [PDF]

J27. Yilei Li, Hugen Yan, Damon B Farmer, Xiang Meng, Wenjuan Zhu, Richard M Osgood, Tony F Heinz, Phaedon Avouris, "Graphene plasmon enhanced vibrational sensing of surface-adsorbed layers", Nano Letters, Vol.14, pp 1573-1577, (2014) [PDF]

2013

J26. Hugen Yan, Tony Low, Wenjuan Zhu, Yanqing Wu, Marcus Freitag, Xuesong Li, Francisco Guinea, Phaedon Avouris and Fengnian Xia, "Damping pathways of mid-infrared plasmons in graphene nanostructures", Nature Photonics, 7, pp.394-399, (2013) [PDF]

J25. Wenjuan Zhu, Tony Low, Damon B. Farmer, Keith Jenkins, Bruce Ek, and Phaedon Avouris, "Effect of dual gate control on the alternating current performance of graphene radio frequency device", J. Appl. Phys. 114, 044307 (2013) [PDF]

J24. Marcus Freitag, Tony Low, Wenjuan Zhu, Hugen Yan, Fengnian Xia, Phaedon Avouris, "Photocurrent in graphene harnessed by tunable intrinsic plasmons", Nature Communications, Vol. 4, Article number:1951, (2013) [PDF]

J23. Wenjuan Zhu, Damon Farmer, Keith Jenkins, Bruce Ek, Satoshi Oida, Xuesong Li, Jim Bucchignano, Simon Dawes, Elizabeth A. Duch, and Phaedon Avouris, "Graphene radio frequency devices on flexible substrate", Appl. Phys. Lett. Vol. 102, 233102 (2013) [PDF]

2012

J22. Wenjuan Zhu, Tony Low, Vasili Perebeinos, Ageeth A. Bol, Yu Zhu, Hugen Yan, Jerry Tersoff, Phaedon Avouris, "Structure and electronic transport in graphene wrinkles", Nano Letters, Vol. 12, pp 3431-3436, (2012) [PDF]

J21. Hugen Yan, Xuesong Li, Bhupesh Chandra, George Tulevski, Yanqing Wu, Marcus Freitag, Wenjuan Zhu, Phaedon Avouris, Fengnian Xia , "Tunable infrared plasmonic devices using graphene/insulator stacks", Nature Nanotechnology 7, 330-334 (2012) [PDF]

J20. Yanqing Wu, Damon B Farmer, Wenjuan Zhu, Shu-Jen Han, Christos D Dimitrakopoulos, Ageeth A Bol, Phaedon Avouris, Yu-Ming Lin, "Three-terminal graphene negative differential resistance devices", ACS Nano, 6, pp 2610-2616, (2012) [PDF]

J19. Hugen Yan, Zhiqiang Li, Xuesong Li, Wenjuan Zhu, Phaedon Avouris, Fengnian Xia, "Infrared spectroscopy of tunable dirac terahertz magneto-plasmons in graphene", Nano Letters, 12, pp 3766-3771, (2012) [PDF]

J18. Ching-Tzu Chen, Tony Low, Hsin-Ying Chiu and Wenjuan Zhu, "Graphene-Side-Gate Engineering", IEEE Electron Device Letters, Vol. 33, No.3, pp. 330, (2012) [PDF]

J17. Yanqing Wu, Keith A Jenkins, Alberto Valdes-Garcia, Damon B Farmer, Yu Zhu, Ageeth A Bol, Christos Dimitrakopoulos, Wenjuan Zhu, Fengnian Xia, Phaedon Avouris, Yu-Ming Lin, "State-of-the-art graphene high-frequency electronics", Nano Letters, 12, pp 3062-3067, (2012) [PDF]

2011

J16. Wenjuan Zhu, C. Dimitrakopoulos, M. Freitag and Ph. Avouris, "Layer Number Determination and Thickness-dependent Properties of Graphene Grown on SiC", IEEE Transactions of nanotechnology, Vol. 10, No. 5, pp.1196, (2011) [PDF]

J15. Hugen Yan, Fengnian Xia, Wenjuan Zhu, Marcus Freitag, Christos Dimitrakopoulos, Ageeth A. Bol, George Tulevski, and Phaedon Avouris, "Infrared Spectroscopy of Wafer-Scale Graphene", ACS Nano, Vol. 5, No.12, pp 9854, (2011) [PDF]

2010

J14. Wenjuan Zhu, D. Neumayer, V. Perebeinos, and Ph. Avouris, "Silicon Nitride Gate Dielectrics and Band Gap Engineering in Graphene Layers", Nano Letters, Vol. 10, pp. 3572, (2010) [PDF]

J13. Y. Lin, C. Dimitrakopoulos, D. B. Farmer, S-J. Han, Y. Wu, Wenjuan Zhu, D. K. Gaskill, J. L. Tedesco, R.L. Myers-Ward, C.R. Eddy, Jr., Alfred Grill, and Ph. Avouris, "Multicarrier transport in epitaxial multilayer graphene", Applied Physics Letters, Vol. 97, 112107, (2010) [PDF]

2009

J12. Wenjuan Zhu, V. Perebeinos, M. Freitag and Ph. Avouris, "Carrier scattering, mobilities, and electrostatic potential in monolayer, bilayer, and trilayer graphene", Physics Review B, Vol. 80, 235402, (2009)  [PDF]

2004

 J11. W. J. Zhu and T.P. Ma, "Temperature dependence of channel mobility in HfO2-gated NMOSFETs", IEEE Electron Device Letters, Vol. 25, No. 2, pp. 89- 91, (2004) [PDF]

J10. W.J. Zhu, J.P. Han, and T.P. Ma, "Mobility Measurement and Degradation Mechanisms of MOSFETs MadeWith Ultrathin High-k Dielectrics", IEEE Transactions on Electron Devices, Vol. 51, No.1, pp.98- 105, (2004) [PDF]

J9. Y. Yang, W. J. Zhu, T.P Ma and S. Stemmer, "High-temperature phase stability of hafnium aluminate films for alternative gate dielectrics", Journal of Applied Physics, Vol. 95, No.7, pp.3772-3777, (2004) [PDF]

2003

J8. S. Stemmer, Z.Q. Chen, W. J. Zhu and T. P. Ma, "Electron Energy-loss Spectroscopy Study of Thin Film Hafnium Aluminates for Novel Gate Dielectrics", Journal of Microscopy, Vol. 210, Issue 1, pp.74-79, (2003) [PDF]

2002

J7. W.J. Zhu, T. Tamagawa, M. Gibson, T. Furukawa and T.P. Ma, "Effect of Al inclusion in HfO2 on the physical and electrical properties of the dielectrics", IEEE Electron Device Letters, Vol. 23, No.11, pp. 649- 651, (2002) [PDF]

J6. W.J. Zhu, S. Zafar, T. Tamagawa, and T.P. Ma, "Charge trapping in ultra-thin hafnium oxide", IEEE Electron Device Letters, Vol. 23, No.10, pp.597-599, (2002) [PDF]

J5. W.J. Zhu, T.P. Ma, T. Tamagawa, J. Kim and Y.Di, "Current Transport in Metal/Hafnium Oxide/Silicon Structure", IEEE Electron Device Letters, Vol. 23, No.2, pp.97-99, (2002) [PDF]

J4. Min She Tsu-Jae King Chenming Hu Wenjuan Zhu, Zhijiong Luo Jin-Ping Han Tso-Ping Ma, "JVD silicon nitride as tunnel dielectric in p-channel flash memory", IEEE Electron Device Letters, Vol. 23, Issue: 2, pp. 91-93, (2002) [PDF]

J3. C.M. Osburn, I. Kim, S.K. Han, I. De, K.F. Yee, S. Gannavaram, S.J. Lee, C.-H. Lee, Z.J. Luo, W. Zhu, J.R. Hauser, D.-L, Kwong, G. Lucovsky, T.P. Ma, M.C. Ozturk, "Vertically scaled MOSFET gate stacks and junctions: How far are we likely to go?", IBM Journal of Research and Development, Vol. 46, No. 2/3, pp. 299-315, (2002) [PDF]

1999

J2. W.J. Zhu, X.W. Wang, T.P. Ma, Jesse B. Tucker and Mulpuri V. Rao, "Highly Durable SiC nMISFET's at 450oC", Materials Science Forum, Vols. 338-342, pp.1311-1314, (1999) [PDF]

1997

J1. Li Xiangyang, Zhao Jianhua, Zhu Wenjuan, Hu Xierong, "The Impulse Coupling of Interaction between Gradate and Intensive Pulsed Laser", Infrared and Laser Engineering, Vol. 26, No. 4, (1997) [PDF]