Journals

1997 | 1999 | 20012002 | 2003 | 2004 | 2005 | 2006 | 2008200920102011 | 2012 | 2013 | 20142016 | 2017 | 2018

2018

J73. Jaron A. Kropp, Yuhang Cai, Zihan Yao, Wenjuan Zhu, and Theodosia Gougousi, "Atomic layer deposition of Al2O3 and TiO2 on MoS2 surfaces", Journal of Vacuum Science & Technology A, Vol 36, 06A101, (2018) [PDF]

J72. Kai Xu, Yuhang Cai, and Wenjuan Zhu, "Esaki Diodes Based on 2-D/3-D Heterojunctions", IEEE Transactions on Electron Devices, Vol. 65, No. 10, p. 4155, (2018) [PDF]

J71. Jialun Liu, Yujie Zhou, and Wenjuan Zhu, “Dielectric-induced interface states in black phosphorus and tungsten diselenide capacitors”, Applied Physics Letters 113, 013103, (2018) [PDF]

J70. Yuhang Cai , Kai Xu and Wenjuan Zhu, "Synthesis of transition metal dichalcogenides and their heterostructures", Materials Research Express, Vol. 5, 095904, (2018) [PDF]

J69.  Hojoon Ryu, Kai Xu, Ji Guo, and Wenjuan Zhu, "Ferroelectric Aluminum-Doped Hafnium Oxide for Memory Applications", accepted in 76th Device Research Conference, (2018) [PDF]

J68.  B. Gopireddy, D. Skarlatos, W. Zhu, and J. Torrellas, "Hetero-Device Architecture for CPUs and GPUs", The 45th International Symposium on Computer Architecture (ISCA), (2018) [PDF]

J67.   Zihan Yao, Jialun Liu, Kai Xu, Edmond K. C. Chow, and Wenjuan Zhu, "Material Synthesis and Device Aspects of Monolayer Tungsten Diselenide", Scientific Reports, Vol. 8, Article number: 5221, (2018) [PDF]

2017

J66.  J. Liu, Y. Zhou, and W. Zhu, “AC characterization of Black Phosphorus with Al2O3 Gate dielectrics”, 48th IEEE Semiconductor Interface Specialists Conference, (2017)

J65.  K. Xu, Y. Chen, J. Lyding, and W. Zhu, “Gate-Tunable Resonant Tunneling in Black-Phosphorus/hBN Heterostructures”, 48th IEEE Semiconductor Interface Specialists Conference, (2017)

J64.  Z. Yao, J. Liu, K. Xu, E. Chow, and W. Zhu, “Synthesis and Electrical Characterization of Monolayer Tungsten Diselenide”, 48th IEEE Semiconductor Interface Specialists Conference, (2017) [PDF]

J63.   W. C Yap, H Jiang, J Liu, Q Xia, W. J. Zhu, “Ferroelectric transistors with monolayer molybdenum disulfide and ultra-thin aluminum-doped hafnium oxide”, Applied Physics Letters, Vol. 111, Article number:  013103, (2017). [PDF]

J62.   W. Luo, R. Yang, J. Liu, Y. Zhao, W. Zhu, G. Xia, “Thermal sublimation: a scalable and controllable thinning method for the fabrication of few-layer black phosphorus”, Nanotechnology, Vol. 28, Article number: 285301, (2017) [PDF]

2016

J61.  W. C. Yap and W. J. Zhu, "Novel Two-dimensional GeSe-MoS2 PN Heterojunctions", 47th IEEE Semiconductor Interface Specialists Conference, (2016)

J60.  J. Liu, and W. J. Zhu, "Characterization of Interface States in Black Phosphorus Capacitors with Boron Nitride Gate Dielectrics", 47th IEEE Semiconductor Interface Specialists Conference, (2016)

J59. Z. Yang, R. Grassi, M. Freitag, Y-H. Lee, T. Low, and W. J. Zhu, “Spatial/temporal photocurrent and electronic transport in monolayer molybdenum disulfide grown by chemical vapor deposition”, Applied Physics Letters Vol. 108, Article number: 083104, (2016) [PDF]

J58. S-C. Lu, M. Mohamed, and W. J. Zhu, “Novel vertical hetero- and homo-junction tunnel field-effect transistors based on multi-layer 2D crystals”, 2D Materials, Vol.3, Article number: 011010, (2016) [PDF]

J57. M. Mehboudi, A. M. Dorio, W. J. Zhu, A. van der Zande, H. O. Churchill, A. A. Pacheco-Sanjuan, E. O. Harriss, P. Kumar, and S. Barraza-Lopez, “Two-Dimensional Disorder in Black Phosphorus and Monochalcogenide Monolayers”, Nano Letters, Vol. 16, pp 1704−1712, (2016) [PDF]

J56. M. Mehboudi, B. M. Fregoso, Y. Yang, W. J. Zhu, A. van der Zande, J. Ferrer, L. Bellaiche, P. Kumar, and S. Barraza-Lopez, "Structural Phase Transition and Material Properties of Few-Layer Monochalcogenides", Phys. Rev. Lett. Vol. 117, Article number: 246802, (2016) [PDF]

J55. Z. Yang, R. Grassi, M. Freitag, Y-H. Lee, T. Low, and W. Zhu, "Spatial/temporal photocurrent and electronic transport in monolayer molybdenum disulfide grown by chemical vapor deposition", Applied Physics Letters Vol. 108, Article number: 083104, (2016) [PDF]

J54. S-C. Lu, M. Mohamed, and W. Zhu, "Novel vertical hetero- and homo-junction tunnel field-effect transistors based on multi-layer 2D crystals", 2D Materials, Vol.3, Article number: 011010, (2016) [PDF]

J53. M. Mehboudi, A. M. Dorio, W. Zhu, A. van der Zande, H. O. Churchill, A. A. Pacheco-Sanjuan, E. O. Harriss, P. Kumar, and S. Barraza-Lopez, "Two-Dimensional Disorder in Black Phosphorus and Monochalcogenide Monolayers", Nano Letters, Vol. 16, pp 1704-1712, (2016) [PDF]

J52. W. C. Yap and W. J. Zhu, "Novel Two-dimensional GeSe-MoS2 PN Heterojunctions", 47th IEEE Semiconductor Interface Specialists Conference, 2016

J51. J. Liu, and W. J. Zhu, "Characterization of Interface States in Black Phosphorus Capacitors with Boron Nitride Gate Dielectrics", 47th IEEE Semiconductor Interface Specialists Conference, 2016

2014

J50. Wenjuan Zhu, Tony Low, Yi-Hsien Lee, Han Wang, Damon B. Farmer, Jing Kong, Fengnian Xia and Phaedon Avouris, "Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition", Nature Communications, Vol. 5, Article number: 3087, (2014) [PDF]

J49. Marcus Freitag, Tony Low, Luis Martin-Moreno, Wenjuan Zhu, Francisco Guinea and Phaedon Avouris, "Substrate-Sensitive Mid-infrared Photoresponse in Graphene", ACS Nano, Vol. 8, pp 8350-8356, (2014) [PDF]

J48. Yilei Li, Hugen Yan, Damon B Farmer, Xiang Meng, Wenjuan Zhu, Richard M Osgood, Tony F Heinz, Phaedon Avouris, "Graphene plasmon enhanced vibrational sensing of surface-adsorbed layers", Nano Letters, Vol.14, pp 1573-1577, (2014) [PDF]

2013

J47. Hugen Yan, Tony Low, Wenjuan Zhu, Yanqing Wu, Marcus Freitag, Xuesong Li, Francisco Guinea, Phaedon Avouris and Fengnian Xia, "Damping pathways of mid-infrared plasmons in graphene nanostructures", Nature Photonics, 7, pp.394-399, (2013) [PDF]

J46. Wenjuan Zhu, Tony Low, Damon B. Farmer, Keith Jenkins, Bruce Ek, and Phaedon Avouris, "Effect of dual gate control on the alternating current performance of graphene radio frequency device", J. Appl. Phys. 114, 044307 (2013) [PDF]

J45. Marcus Freitag, Tony Low, Wenjuan Zhu, Hugen Yan, Fengnian Xia, Phaedon Avouris, "Photocurrent in graphene harnessed by tunable intrinsic plasmons", Nature Communications, Vol. 4, Article number:1951, (2013) [PDF]

J44. Wenjuan Zhu, Damon Farmer, Keith Jenkins, Bruce Ek, Satoshi Oida, Xuesong Li, Jim Bucchignano, Simon Dawes, Elizabeth A. Duch, and Phaedon Avouris, "Graphene radio frequency devices on flexible substrate", Appl. Phys. Lett. Vol. 102, 233102 (2013) [PDF]

2012

J43. Wenjuan Zhu, Tony Low, Vasili Perebeinos, Ageeth A. Bol, Yu Zhu, Hugen Yan, Jerry Tersoff, Phaedon Avouris, "Structure and electronic transport in graphene wrinkles", Nano Letters, Vol. 12, pp 3431-3436, (2012) [PDF]

J42. Hugen Yan, Xuesong Li, Bhupesh Chandra, George Tulevski, Yanqing Wu, Marcus Freitag, Wenjuan Zhu, Phaedon Avouris, Fengnian Xia , "Tunable infrared plasmonic devices using graphene/insulator stacks", Nature Nanotechnology 7, 330-334 (2012) [PDF]

J41. Yanqing Wu, Damon B Farmer, Wenjuan Zhu, Shu-Jen Han, Christos D Dimitrakopoulos, Ageeth A Bol, Phaedon Avouris, Yu-Ming Lin, "Three-terminal graphene negative differential resistance devices", ACS Nano, 6, pp 2610-2616, (2012) [PDF]

J40. Hugen Yan, Zhiqiang Li, Xuesong Li, Wenjuan Zhu, Phaedon Avouris, Fengnian Xia, "Infrared spectroscopy of tunable dirac terahertz magneto-plasmons in graphene", Nano Letters, 12, pp 3766-3771, (2012) [PDF]

J39. Ching-Tzu Chen, Tony Low, Hsin-Ying Chiu and Wenjuan Zhu, "Graphene-Side-Gate Engineering", IEEE Electron Device Letters, Vol. 33, No.3, pp. 330, (2012) [PDF]

J38. Yanqing Wu, Keith A Jenkins, Alberto Valdes-Garcia, Damon B Farmer, Yu Zhu, Ageeth A Bol, Christos Dimitrakopoulos, Wenjuan Zhu, Fengnian Xia, Phaedon Avouris, Yu-Ming Lin, "State-of-the-art graphene high-frequency electronics", Nano Letters, 12, pp 3062-3067, (2012) [PDF]

2011

J37. Wenjuan Zhu, C. Dimitrakopoulos, M. Freitag and Ph. Avouris, "Layer Number Determination and Thickness-dependent Properties of Graphene Grown on SiC", IEEE Transactions of nanotechnology, Vol. 10, No. 5, pp.1196, (2011) [PDF]

J36. Hugen Yan, Fengnian Xia, Wenjuan Zhu, Marcus Freitag, Christos Dimitrakopoulos, Ageeth A. Bol, George Tulevski, and Phaedon Avouris, "Infrared Spectroscopy of Wafer-Scale Graphene", ACS Nano, Vol. 5, No.12, pp 9854, (2011) [PDF]

J35. Y.Q. Wu, D. B. Farmer, W. J. Zhu, A. Valdes-Garcia, K.A. Jenkins, C. Dimitrakopoulos, Ph. Avouris and Y.-M. Lin, “Record High RF Performance for Epitaxial Graphene Transistors”, IEEE International Electron Device Meeting (IEDM), Technical Digest, pp. 23.8.1 - 23.8.3, (2011)

2010

J34. Wenjuan Zhu, D. Neumayer, V. Perebeinos, and Ph. Avouris, "Silicon Nitride Gate Dielectrics and Band Gap Engineering in Graphene Layers", Nano Letters, Vol. 10, pp. 3572, (2010) [PDF]

J33. Y. Lin, C. Dimitrakopoulos, D. B. Farmer, S-J. Han, Y. Wu, Wenjuan Zhu, D. K. Gaskill, J. L. Tedesco, R.L. Myers-Ward, C.R. Eddy, Jr., Alfred Grill, and Ph. Avouris, "Multicarrier transport in epitaxial multilayer graphene", Applied Physics Letters, Vol. 97, 112107, (2010) [PDF]

2009

J32. Wenjuan Zhu, V. Perebeinos, M. Freitag and Ph. Avouris, "Carrier scattering, mobilities, and electrostatic potential in monolayer, bilayer, and trilayer graphene", Physics Review B, Vol. 80, 235402, (2009)  [PDF]

2008

J31. W.J. Zhu, J.Shepard, W. He, A. Ray, P. Ronsheim, D. Schepis, D. Mocuta, E. Leobandung, "High performance and highly stable ultra-thin oxynitride for CMOS applications",The 9th International Conference on Solid-State and Integrated-Circuit Technology, A6.5, (2008)

2006

J30. P. Jamison, M. Copel, M. Chudzik, M.M. Frank, B.P.Linder, R.Jammy, W.J. Zhu, “A comparison of electrical and physical properties of MOCVD hafnium silicate thin films deposited using various silicon precursors”, Materials Research Society Symposium Proceedings, v 917, Gate Stack Scaling: Materials Selection, Role of Interfaces, and Reliability Implications, p 95-99, (2006)

2005

J29. E. Leobandung, H. Nayakama, D.Mocuta, … W.J. Zhu, et. al, “High performance 65 nm SOI technology with dual stress liner and low capacitance SRAM cell”, Symposium on VLSI Technology, Symposium on VLSI Technology, Digest of Technical Papers, p 126-127, (2005)

2004

 J28. W. J. Zhu and T.P. Ma, "Temperature dependence of channel mobility in HfO2-gated NMOSFETs", IEEE Electron Device Letters, Vol. 25, No. 2, pp. 89- 91, (2004) [PDF]

J27. W.J. Zhu, J.P. Han, and T.P. Ma, "Mobility Measurement and Degradation Mechanisms of MOSFETs MadeWith Ultrathin High-k Dielectrics", IEEE Transactions on Electron Devices, Vol. 51, No.1, pp.98- 105, (2004) [PDF]

J26. Y. Yang, W. J. Zhu, T.P Ma and S. Stemmer, "High-temperature phase stability of hafnium aluminate films for alternative gate dielectrics", Journal of Applied Physics, Vol. 95, No.7, pp.3772-3777, (2004) [PDF]

J25. D.-G. Park, Z.J. Luo, N. Edleman, W.J. Zhu, P. Nguyen, K. Wong, C. Cabral1, P. Jamison1, B.H. Lee, A. Chou, M. Chudzik, J. Bruley, O. Gluschenkov, P. Ronsheim, A. Chakravarti, R. Mitchell, V. Ku, H. Kim1, E. Duch1, P. Kozlowski1, C.D’Emic1, V. Narayanan1, A. Steegen, R. Wise, R. Jammy1, R. Rengarajan, H. Ng, A. Sekiguchi, and C.H. Wann, “Thermally robust dual-work function ALD-MNx MOSFETs using conventional CMOS process flow”, 2004 Symposium on VLSI Technology, Digest of Technical Papers, pp.186-187, (2004)

2003

J24. S. Stemmer, Z.Q. Chen, W. J. Zhu and T. P. Ma, "Electron Energy-loss Spectroscopy Study of Thin Film Hafnium Aluminates for Novel Gate Dielectrics", Journal of Microscopy, Vol. 210, Issue 1, pp.74-79, (2003) [PDF]

J23. N. V. Nguyen, J.-P. Han, and J.Y. Kim, W.J. Zhu, Z. Luo, and T. P. Ma, "Optical properties of jet-vapor-deposited TiAlO and HfAlO determined by vacuum ultraviolet spectroscopic ellipsometry", Characterization and Metrology for ULSI Technology, 2003 International Conference, pp.181-185, (2003)

J22. S. Stemmer, Y. Yang, Y. Li, B Foran, P.S. Lysaght, J.A. Gisby, J.R. Taylor, S.K. Streiffer, P. Fuoss, S. Seifert, W.J. Zhu, and T.P. Ma, "Structure and stability of alternative gate dielectrics for Si CMOS”, 2003 International Semiconductor Device Research Symposium, pp.60- 61, (2003)

J21. C.M. Osburn, S.K. Han, I. Kim, S.A. Campbell, E. Garfunkel, T. Gustafson, J. Hauser, T.-J. King, Q. Liu, P. Ranade, A. Kingon, D.-L. Kwong, S.J. Lee, C.H. Lee, K. Onishi, C.S. Kang, R. Choi, H. Cho, R. Nich, G. Lucovsky, J.G. Hong, T.P. Ma, W.J. Zhu, Z. Luo, J.P. Maria, D. Wicaksana, V. Misra, J.J. Lee, Y.S. Suh, G. Parksons, D. Niu, and S. Stemmer, “Integration Issues with high-k Gate Stacks”, The Electrochemical Society PV 2003-06, ULSI Process Integration III, p.375, (2003)

2002

J20. W.J. Zhu, T. Tamagawa, M. Gibson, T. Furukawa and T.P. Ma, "Effect of Al inclusion in HfO2 on the physical and electrical properties of the dielectrics", IEEE Electron Device Letters, Vol. 23, No.11, pp. 649- 651, (2002) [PDF]

J19. W.J. Zhu, S. Zafar, T. Tamagawa, and T.P. Ma, "Charge trapping in ultra-thin hafnium oxide", IEEE Electron Device Letters, Vol. 23, No.10, pp.597-599, (2002) [PDF]

J18. W.J. Zhu, T.P. Ma, T. Tamagawa, J. Kim and Y.Di, "Current Transport in Metal/Hafnium Oxide/Silicon Structure", IEEE Electron Device Letters, Vol. 23, No.2, pp.97-99, (2002) [PDF]

J17. Min She Tsu-Jae King Chenming Hu Wenjuan Zhu, Zhijiong Luo Jin-Ping Han Tso-Ping Ma, "JVD silicon nitride as tunnel dielectric in p-channel flash memory", IEEE Electron Device Letters, Vol. 23, Issue: 2, pp. 91-93, (2002) [PDF]

J16. C.M. Osburn, I. Kim, S.K. Han, I. De, K.F. Yee, S. Gannavaram, S.J. Lee, C.-H. Lee, Z.J. Luo, W. Zhu, J.R. Hauser, D.-L, Kwong, G. Lucovsky, T.P. Ma, M.C. Ozturk, "Vertically scaled MOSFET gate stacks and junctions: How far are we likely to go?", IBM Journal of Research and Development, Vol. 46, No. 2/3, pp. 299-315, (2002) [PDF]

J15. W.J. Zhu, T. Tamagawa, W.Y. Wang, and T.P. Ma, “Mobility Extraction for MOSFETs Made with Ultra-thin High-k Dielectrics: Correct Accounting of Channel Carriers”, IEEE 33th Semiconductor Interface Specialists Conference (SISC), Sec. 7.2, (2002) (IEEE SISC Ed Nicollican Award for Best Student Paper)

J14. W.J. Zhu, T.P. Ma, T. Tamagawa, Y. Di, M. Gibson, J. Kim, R. Carruthers and T. Furukawa, “Thermal Stability of Hafnium Oxide and Hafnium Aluminum Oxide”, Connecticut Microelectronics and Optoelectronics Symposium (CMOC), Section 1, paper 02, (2002)

2001

J13. W.J. Zhu, T. P. Ma, T. Tamagawa, Y.Di, J. Kim, R. Carruthers, M.Gibson and T. Furukawa, “HfO2 and HfAlO for CMOS: Thermal Stability and Current Transport”, IEEE International Electron Device Meeting (IEDM), Technical Digest, Section 20-4, pp. 463-466, (2001)

J12. W.J. Zhu, M. Khare, J. Snare, P.R. Varekamp, S.H. Ku, P. Agnello, T.C. Chen and T.P. Ma, "Thickness Measurement of Ultra-thin Gate Dielectrics under Inversion Condition", International Symposium on VLSI Technologies, Systems and Applications, (2001)

J11. W.J. Zhu, T. Tamagawa, Y. Di and T.P. Ma, “Thermal Stability of Hafnium Oxide and Hafnium Aluminum Oxide”, IEEE 32th Semiconductor Interface Specialists Conference (SISC), Sec. 6.2, (2001)

J10. W.J. Zhu, T. Tamagawa, J. Kim, C. Broadbridge, T.P. Ma, “Characteristics of Ultra-thin Hafnium Oxide Gate Dielectrics”, Connecticut Microelectronics and Optoelectronics Symposium (CMOC), Section 3, paper 02, (2001)

J9. C. Caragianis-Broadbridge, J.-P. Han, T.P. Ma, A.H. Lehman, W.J. Zhu, Z. Luo, D.L. Pechkis, B.L. Laube; “Microstructure and Physical Characterization of Ferroelectric-gate Memory Capacitors with Various Buffer Layers”, Transport and Microstructural Phenomena in Oxide Electronics, Material Research Society, San Francisco, Vol. 666, (2001)

J8. C. Caragianis-Broadbridge, D.L. Pechkis and E. Anderson, J.-P. Han, W.J. Zhu, Z. Luo, T.P. Ma, A. Hein Lehman and K.L. Klein, and B.L. Laube, “Microstructural and Physical Properties of Thin Film Dielectrics on Silicon Substrates”, Connecticut Microelectronics and Optoelectronics Symposium (CMOC), Section, P4, (2001)

2000

J7. W.J. Zhu, T. Tamagawa, B. Halpern, X.W. Wang, and T.P. Ma, “Electrical Properties of Ultra-thin Hafnium Oxide Gate Dielectrics”, IEEE 31th Semiconductor Interface Specialists Conference (SISC), Sec. 1.2, (2000)

J6. C. Caragianis-Broadbridge, J. R. Miecznikowski, W.J. Zhu, Z. Luo, J. Han, and A. Hein Lehman, “Microstructure and Electronic Properties of Thin Film Nanoporus Silica as a Function of Processing and Annealing Methods”, Materials, Technology, and Reliability for Advanced Interconnects and Low-k Dielectrics, Material Research Society, San Francisco, Vol. 398, (2000)

J5. W.J. Zhu, X.W. Wang, and T.P. Ma, “Temperature Dependence of Channel Electron Mobility in 6H-SiC NMISFETs”, Connecticut Microelectronics and Optoelectronics Symposium (CMOC), (2000)

1999

J4. W.J. Zhu, X.W. Wang, T.P. Ma, Jesse B. Tucker and Mulpuri V. Rao, "Highly Durable SiC nMISFET's at 450oC", Materials Science Forum, Vols. 338-342, pp.1311-1314, (1999) [PDF]

J3. W.J. Zhu, X.W. Wang, and T.P. Ma, “Temperature dependence of channel Electron Mobility in 6H-SiC nMOSFETs”, IEEE 30th Semiconductor Interface Specialists Conference (SISC), Sec. 3.1, (1999)

J2. X.W. Wang, W.J. Zhu and T.P. Ma, “High Temperature Reliable nMOSFETs on p-type 6H-SiC”, IEEE International Electron Device Meeting (IEDM), Technical Digest, pp. 209-212, (1999)

1997

J1. Li Xiangyang, Zhao Jianhua, Zhu Wenjuan, Hu Xierong, "The Impulse Coupling of Interaction between Gradate and Intensive Pulsed Laser", Infrared and Laser Engineering, Vol. 26, No. 4, (1997) [PDF]