Patents

1999 | 2009 | 2012 | 2013 | 2014 | Pending

Pending

P22. Wenjuan Zhu, "Nano-units, in an educated manner with hung up graph diaphragm", German Patent application GE102013200214A1, filed January 10, 2013, patent pending

P21. Christos D. Dimitrakopoulos, Alfred Grill, Deborah A. Neumayer, Dirk Pfeiffer, Wenjuan Zhu, Damon B. Farmer, Yu-Ming Lin, "Bilayer gate dielectric including silicon nitride and hafnium oxide continuously covering graphene layer in semiconductor structure", G.B. Patent application 2499311A, filed January 11, 2013, patent pending

P20. Christos D. Dimitrakopoulos, Damon B. Farmer, Alfred Grill, Yu-Ming Lin, Deborah A. Neumayer, Dirk Pfeiffer, Wenjuan Zhu, "Blocking layer gate dielectric with small equivalent oxide thickness for graph elements", German Patent application GE102012222116A1, filed December 4, 2012, patent pending

P19. Hongbo Peng, Gustavo A. Stolovitzky, Wenjuan Zhu, "Graphene transistor gated by charges through a nanopore for bio-molecular sensing and DNA sequencing", U.S. Patent application US2013/0270521Al, filed Apr. 17, 2012, Patent pending

P18. Wenjuan Zhu, Yanqing Wu, Jin Cai, "Graphene pressure sensors", U.S. Patent application US2013/0270511Al, filed Apr. 12, 2012, Patent pending

2014

P17. Wenjuan Zhu, Yanqing Wu, Phaedon Avouris, "Graphene Devices and Semiconductor Field Effect Transistors in 3D Hybrid Integrated Circuits", U.S. Patent US 8,748,871 B2, filed January, 18, 2012, issued Jun 10, 2014

P16. Wenjuan Zhu, "Graphene-based efuse device" (method), U.S. Patent US 8,735,242 B2, filed Jul. 31, 2012, issued May 27, 2014

P15. Christos D. Dimitrakopoulos, Damon B. Farmer, Alfred Grill, Yu-Ming Lin, Deborah A. Neumayer, Dirk Pfeiffer, Wenjuan Zhu, "Bilayer gate dielectric with low equivalent oxide thickness for graphene devices", U.S. Patent US 8,680,511 B2, filed February 9, 2012, issued Mar 25, 2014

2013

P14. Wenjuan Zhu, "Graphene-based efuse device", U.S. Patent 8,598,634 B1, Filed Sep. 14, 2012, issued Dec. 3, 2013

P13. Wenjuan Zhu, "Graphene-based non-volatile memory" (method), U.S. Patent 8,557,686 B1, Filed Aug. 27, 2012, issued Oct. 15,2013

P12. Wenjuan Zhu, "Nano-devices formed with suspended graphene membrane" (method), U.S. Patent US8569089B2, filed Aug. 31, 2012, issued Oct. 29, 2013

P11. Wenjuan Zhu, "Graphene-based non-volatile memory" (structure), U.S. Patent US8519450 B1, filed August 17, 2012, issued Aug. 27, 2013

P10. Wenjuan Zhu, Deborah A Neumayer, Phaedon Avouris, "Nitride gate dielectric for graphene MOSFET", U.S. Patent US 8,530,886 B2, filed March 18, 2011, issued September 10, 2013

P9. Wenjuan Zhu, "Nano-devices formed with suspended graphene membrane" (structure), U.S. Patent US8564027B2, filed January 27, 2012, issued Oct. 22, 2013

2012

P8. Wenjuan Zhu, "Structure and method of forming buried-channel graphene field effect device", U.S. Patent US8101474B2, filed January 6, 2010, issued January 24, 2012

2010

P7. Huilong Zhu, Wenjuan Zhu, Zhijiong Luo, "Forming silicided gate and contacts from polysilicon germanium and structure formed", U.S. Patent US7718513 B2, filed April 13, 2007, issued May 18, 2010

2009

P6. Huilong Zhu, Mahender Kumar, Dan M. Mocuta, Ravikumar Ramachandran, Wenjuan Zhu, "Structure and method for manufacturing device with ultra thin SOI at the tip of a V-shape channel", U.S. Patent 7528027 B1, filed March 25, 2008, issued, May 5, 2009

P5. Wenjuan Zhu, Michael P. Chudzik, Oleg Gluschenkov, Dae-Gyu Park, Akihisa Sekiguchi, "Method of forming an ultra-thin HfSiO metal silicate film for high performance CMOS applications and semiconductor structure formed in said method", U.S. Patent 7504700 B2, filed April 21, 2005, issued March 17, 2009

P4. Huilong Zhu, Ravikumar Ramachandran, Effendi Leobandung, Mahender Kumar, Wenjuan Zhu, Christine Norris, "Field effect device including inverted V shaped channel re-gion and method for fabrication thereof", U.S. Patent US7485510B2, filed October 3, 2006, issued February 3, 2009

P3. Huilong Zhu, Ravikumar Ramachandran, Effendi Leobandung, Mahender Kumar, Wenjuan Zhu, Christine Norris, "Semiconductor structure and manufacturing method thereof", China Patent CN100568531C, filed January 8, 2007, issued December 9, 2009.

P2. Wenjuan Zhu, Michael P. Chudzik, Oleg Gluschenkov, Dae-Gyu Park, Akihisa Sekiguchi, "Semiconductor structure", China Patent CN100550422C, filed April 19, 2006, issued October 14, 2009

1999

P1. Xiaoning Hu, Lixue Kang, Wenjuan Zhu,"Flat vacuum sample chamber capable of simultaneously measuring light transmission and photoelectric response characteristic", China Patent CN2351756Y, filed November 5, 1998, issued December 1, 1999